High-temperature PbTe diodes

Bonding and high-temperature reliability of NiFeMo alloy/n-type PbTe joints for thermoelectric module applications

PbTe is an extremely important thermoelectric (TE) material, due to its high TE conversion efficiency. Consequently, our effort focuses on developing PbTebased TE modules, which requires developing novel approaches for bonding metallic contacts to PbTe. In this study, Fe, Mo, and NiFeMo alloy foils were directly bonded to n-type PbTe using a rapid hot press at 600, 700, or 800 C under a pressur...

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

We describe here the characteristics of two types of high-quality PbTe p-njunctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics have been...

Analysis of Planar Diodes in Temperature Limited Region

The ideal analysis of planar diodes in Temperature Limited Region is presented. Two types of relations are obtained for electric potential and electric field distributions one accurate but implicit and the other almost accurate but explicit.

Large enhancements in the thermoelectric power factor of bulk PbTe at high temperature by synergistic nanostructuring.

Complex PbTe hopper (skeletal) crystals with high hierarchy.

A facile and mild solution method has been discovered for the synthesis of complex PbTe hopper crystals in large quantities, which are highly similar to the cubic halite skeletal crystals formed from extreme supersaturation in salt lakes existing in nature. This route may provide a new approach to growing other complex semiconductor structures of high hierarchy.